serial number perspective rectifier diode

Perspective Rectifier Diode Series Resistance And

The load resistance, RL of 50 Q was connected to the diode in parallel and grounded to the RF source.

The conversion efficiency up to 80 under direct injection of 1 GHz signal to the diode was achieved.

Perspective Rectifier Diode Series Resistance And

It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency.

Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna.

Higher output voltage in volt range is expected to be achievable for the well-matching condition.

The proposed on-chip AlGaAsGaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.

An on-chip rectenna device is defined as a combination of an on-chip Schottky diode and a planar antenna.

In recent years, interest has turned to the exploitation of on-chip rectennas as wireless low power sources for application in wireless microelectronic systems.

The most common application of rectennas is in radio frequency identification (RFID) tags 22, proximity cards and contactless smart cards 23, which contain an integrated circuit (IC) which is powered by a small rectenna element.

When the device is brought near to an electronic reader unit, radio waves from the reader are received by the rectenna, powering up the IC, which transmits its data back to the reader.

In 2011, Harouni et al.

GHz rectenna with maximum conversion efficiency of 63 at a load resistance of 1.6 kQ.

These reports have thoroughly discussed the results of integrated large-scale discrete diodes and antennas with the insertion of the matching circuits 24-29.

Consequently, due to the large dimensions, these concepts are not suitable for several tens of millimeter-scale on-chip systems.

Thus, on-chip rectenna devices of small dimensions with the omission of impedance matching circuit need to be developed for their application in on-chip proximity communication systems.

Direct injection of RF signals from a signal source were found to be well detected and rectified by the fabricated Schottky diodes which possessed cut-off frequencies of up to several tens of GHz, and a stable DC output voltage was generated.

High RF-to-DC conversion efficiency of up to 50 was obtained with series connection between the diode and the load 15.

This experiment was conducted in order to understand the performance of the integrated devices for real practical applications.

This structure is capable of providing higher electron mobility due to its two-dimensional electron gas (2DEG) layer defined at the interface of the n-doped AlGaAs layer and undoped GaAs layer.

Therefore, the n-AlGaAsGaAs HEMT structure is promising for the fabrication of high-speed and high-frequency devices.

Co-integration of various kinds of functional devices including rectenna devices on the same core material structure is more practical in terms of fabrication processes and cost.

Thus, the development of rectenna devices based on such a structure has been considered in this study.

The details of the materials and the fabrication processes have been described in 10,15,31.

Table 1 summarizes the device dimensions and the operating frequencies.

The CPW structure was designed so that it produces the characteristic impedance, Z0, of 50 Q.

This CPW structure also permits direct injection of the RF signal through a Cascade GSG Infinity-150 microprober.

Figure 2a,b shows the circuit configuration of the direct injection experiment for the Schottky diode and dipole antenna, respectively.

As shown in Figure 2a, the RF signals were directly injected at the input side of diode using a microprober.

Serial Number Perspective Rectifier Diode